Goh1-Xxb Hall Effect Current Sensor (Compatible with LEM Hlsr)

GOH1-XXB Series Current TransducerIPN = 10 ... 50 A Ref:GOH1-10B, GOH1-16B, GOH1-20B, GOH1-32B, GOH1-40B, GOH1-50B  Introduction  The GOH1-xxB series is based on Hall technology and open -loop design. It is suitable for DC, AC, pulsed and any kind of irregular current measurement under the isolated conditions.Dimensions (in mm)ParameterSymbolUnitSpecificationConditionsMinTypicalMaxPrimary nominal RMS currentIPNA±10A, ±16 A, ±20 A, ± 32 A, ±40 A, ±50 A,±120A Primary current, measuring rangeIPMA2.5X IPNFor UC>4.6VResistance of primary jumper @ TA=25ºCRPmΩ 0.21 T=25ºCSupply voltage UCV4.555.5 Reference voltage(output)VrefV2.492.52.51internal referenceOutput voltage range @ IPMVout-VrefV-2 2 Electrical offset voltage @ IP=0VOEmV-5 525ºC ,Vout-VrefTemperature coefficient of VrefTCVrefppm/K-170 170-40ºC~105ºCTemperature drift of VOEVOE_TRangemV-5 5-40ºC~105ºCSensitivity errorεG%-0.5 0.5Factory adjustmentTemperature coefficient of GTCGppm/K-170 170-40ºC~105ºCLinearity error 0…IPNεL% of IPN-0.5 0.5 Magnetic offset voltage(@10*IPN) referred to primaryUOMmV-2.5 2.5 Output RMS noise voltageUNmVP-P 25   mVRMS 2.5 Reaction time @ 10% of IPNtraus 1.42@50A/usStep response time to 90% of IPNtrus 1.82.5@50A/usFrequency bandwidth (-3dB)BWkHz 250  Accuracy @IPNX% of IPN-1 1 Accuracy @IPN @ TAXTA% of IPN-2.5 2.5     /* January 22, 2024 19:08:37 */!function(){function s(e,r){var a,o={};try{e&&e.split(",").forEach(function(e,t){e&&(a=e.match(/(.*?):(.*)$/))&&1