10A 700V N-Channel Enhancement Mode Power Mosfet D10n70 to-252b

PARAMETERSYMBOLVALUEUNITMaximum Drian-Source DC VoltageVDS700VMaximum Gate-Drain VoltageVGS±30VDrain Current(continuous)ID(T=25ºC)10A(T=100ºC)6.3ADrain Current(Pulsed)IDM40ASingle Pulse Avalanche EnergyEAS735mJTotal DissipationTa=25ºCPtot1.04WTC=25ºCPtot130WJunction TemperatureTj-55~150ºCstorage TemperatureTstg-55~150ºC  FeaturesFast SwitchingESD improved capabilityLow ON Resistance (Rdson≤1.1Ω)Low Gate Charge(Typ: 32nC)Low Reverse Transfer Capacitances(Typ: 7pF)100% Single Pulse Avalanche Energy Test100% ΔVDS TestApplicationsUsed in various power switching circuit for system miniaturization and higher efficiency.Power switch circuit of adaptor and charger.  Product Specifications and Packaging ModelsProduct ModelPackage TypeMark NameRoHSPackageQuantity10N70TO-220C10N70Pb-freeTube1000/boxF10N70TO-220FF10N70Pb-freeTube1000/boxI10N70TO-262I10N70Pb-freeTube1000/boxE10N70TO-263E10N70Pb-freeTape & Reel800/boxD10N70TO-252BD10N70Pb-freeTape & Reel5000/box  /* January 22, 2024 19:08:37 */!function(){function s(e,r){var a,o={};try{e&&e.split(",").forEach(function(e,t){e&&(a=e.match(/(.*?):(.*)$/))&&1