General DescriptionThe GreenMOS® high voltage MOSFET
utilizes charge balance technology to achieve outstanding low
on-resistance and lower gate charge. It is engineered to minimize
conduction loss, provide superior switching performance and robust
avalanche capability.The GreenMOS® SuperSi series is based on
Oriental Semiconductor's unique device design to achieve extremely
fast switching characteristics. It is the perfect replacement for
the Gallium Nitride (GaN) device in high frequency operations with
better ruggedness and cost. It is targeted to meet the most
aggressive efficiency standards of power supply systems by pushing
both performance and power density to extreme
limits.Features
Low RDS(ON) & FOMExtremely low switching lossExcellent stability
and uniformityEasy to design inApplicationsPD chargerLarge screen
displayTelecom powerServer powerKey Performance Parameters
ParameterValueUnitVDS, min @ Tj(max)700VID, pulse36ARDS(ON), max @
VGS=10V340mΩQg9.6nCMarking Information Product
NamePackageMarkingOSS65R340DFTO252OSS65R340D Absolute Maximum
Ratings at Tj=25°C unless otherwise noted
ParameterSymbolValueUnitDrain-sourcevoltageVDS650VGate-sourcevoltageVGS±30VContinuous
drain current1), TC=25 °CID12AContinuous drain current1), TC=100
°C7.6Pulsed drain current2), TC=25 °CID, pulse36AContinuous diode
forward current1), TC=25 °CIS12ADiode pulsed current2), TC=25 °CIS,
pulse36APower dissipation3), TC=25 °CPD83WSingle pulsed avalanche
energy5)EAS200mJMOSFET dv/dt ruggedness, VDS=0…480
Vdv/dt50V/nsReverse diode dv/dt, VDS=0…480 V,
ISD≤IDdv/dt15V/nsOperation and storage temperatureTstg, Tj-55 to
150°CThermal Characteristics
ParameterSymbolValueUnitThermalresistance,junction-caseRθJC1.5°C/WThermalresistance,junction-ambient4)RθJA62°C/WElectrical
Characteristics at Tj=25°C unless otherwise
specifiedParameterSymbolMin.Typ.Max.UnitTest conditionDrain-source
breakdown voltageBVDSS650 VVGS=0 V, ID=250
μA700 VGS=0 V, ID=250 μA, Tj=150 °CGate threshold
voltageVGS(th)2.9 3.9VVDS=VGS, ID=250 μADrain-source on- state
resistanceRDS(ON) 0.300.34ΩVGS=10 V, ID=6
A 0.73 VGS=10 V, ID=6 A, Tj=150 °CGate-source leakage
currentIGSS 100nAVGS=30 V -100VGS=-30
VDrain-source leakage currentIDSS 1μAVDS=650 V, VGS=0
VDynamic CharacteristicsParameterSymbolMin.Typ.Max.UnitTest
conditionInput capacitanceCiss 443.5 pFVGS=0 V, VDS=50 V,
ƒ=100 KHzOutput capacitanceCoss 59.6 pFReverse transfer
capacitanceCrss 1.7 pFTurn-on delay
timetd(on) 22.4 nsVGS=10 V, VDS=400 V, RG=2 Ω, ID=6 ARise
timetr 17.5 nsTurn-off delay
timetd(off) 40.3 nsFall timetf 7.2 nsGate
Charge CharacteristicsParameterSymbolMin.Typ.Max.UnitTest
conditionTotal gate chargeQg 9.6 nCVGS=10 V, VDS=400 V,
ID=6
AGate-sourcechargeQgs 2.2 nCGate-drainchargeQgd 4.5 nCGate
plateau voltageVplateau 6.5 VBody Diode
CharacteristicsParameterSymbolMin.Typ.Max.UnitTest conditionDiode
forward voltageVSD 1.3VIS=12 A, VGS=0 VReverse recovery
timetrr 236.5 nsVR=400 V, IS=6 A,di/dt=100 A/μsReverse
recovery chargeQrr 2.2 μCPeak reverse recovery
currentIrrm 19.1 ANoteCalculated continuous current based
on maximum allowable junction temperature.Repetitive rating; pulse
width limited by max. junction temperature.Pd is based on max.
junction temperature, using junction-case thermal resistance.The
value of RθJA is measured with the device mounted on 1 in 2 FR-4
board with 2oz. Copper, in a still air environment with Ta=25
°C.VDD=100 V, VGS=10 V, L=60 mH, starting Tj=25 °C. /*
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