General DescriptionThe GreenMOS® high voltage MOSFET utilizes
charge balance technology to achieve outstanding low on-resistance
and lower gate charge. It is engineered to minimize conduction
loss, provide superior switching performance and robust avalanche
capability.The GreenMOS® Z series is integrated with fast recovery
diode (FRD) to minimize reverse recovery time. It is suitable for
resonant switching topologies to reach higher efficiency, higher
reliability and smaller form factor.FeaturesLow RDS(ON) &
FOMExtremely low switching lossExcellent stability and
uniformityUltra-fast and robust body
diodeApplications
PC powerTelecom powerServer powerEV ChargerMotor driverKey
Performance Parameters ParameterValueUnitVDS, min @
Tj(max)700VID, pulse240ARDS(ON), max @ VGS=10V38mΩQg175nCMarking
Information Product
NamePackageMarkingOSG65R038HZFTO247OSG65R038HZAbsolute Maximum
Ratings at Tj=25°C unless otherwise noted
ParameterSymbolValueUnitDrain-sourcevoltageVDS650VGate-sourcevoltageVGS±30VContinuous
drain current1), TC=25 °CID80AContinuous drain current1), TC=100
°C50Pulsed drain current2), TC=25 °CID, pulse240AContinuous diode
forward current1), TC=25 °CIS80ADiode pulsed current2), TC=25 °CIS,
pulse240APower dissipation3) ,TC=25 °CPD500WSingle
pulsed avalanche energy5)EAS2900mJMOSFET dv/dt ruggedness,
VDS=0…480 Vdv/dt100V/nsReverse diode dv/dt, VDS=0…480 V,
ISD≤IDdv/dt50V/nsOperation and storage temperatureTstg, Tj-55 to
150°CThermal Characteristics
ParameterSymbolValueUnitThermalresistance,junction-caseRθJC0.25°C/WThermalresistance,junction-ambient4)RθJA62°C/WElectrical
Characteristics at Tj=25°C unless otherwise
specifiedParameterSymbolMin.Typ.Max.UnitTest conditionDrain-source
breakdown voltageBVDSS650 VVGS=0 V, ID=2
mA700770 VGS=0 V, ID=2 mA, Tj=150 °CGate
thresholdvoltageVGS(th)3.0 4.5VVDS=VGS, ID=2
mADrain-sourceon-state resistanceRDS(ON) 0.0320.038ΩVGS=10 V,
ID=40 A 0.083 VGS=10 V, ID=40 A, Tj=150 °CGate-source
leakage currentIGSS 100nAVGS=30 V -100VGS=-30
VDrain-source leakage currentIDSS 10μAVDS=650 V, VGS=0
VGate resistanceRG 2.1 Ωƒ=1 MHz, Open drainDynamic
CharacteristicsParameterSymbolMin.Typ.Max.UnitTest conditionInput
capacitanceCiss 9276 pFVGS=0 V, VDS=50 V,ƒ=100 kHzOutput
capacitanceCoss 486 pFReverse transfer
capacitanceCrss 12.8 pFEffective output capacitance,
energy relatedCo(er) 278 pFVGS=0 V, VDS=0 V-400
VEffective output capacitance, time
relatedCo(tr) 1477 pFTurn-on delay
timetd(on) 55.9 nsVGS=10 V, VDS=400 V, RG=2 Ω, ID=40
ARise timetr 121.2 nsTurn-off delay
timetd(off) 114.2 nsFall timetf 8.75 nsGate
Charge CharacteristicsParameterSymbolMin.Typ.Max.UnitTest
conditionTotal gate chargeQg 175.0 nCVGS=10 V, VDS=400 V,
ID=40
AGate-sourcechargeQgs 40.1 nCGate-drainchargeQgd 76.1 nCGate
plateau voltageVplateau 6.4 VBody Diode
CharacteristicsParameterSymbolMin.Typ.Max.UnitTest conditionDiode
forward voltageVSD 1.3VIS=80 A, VGS=0 VReverse recovery
timetrr 180 nsIS=30 A,di/dt=100 A/μsReverse recovery
chargeQrr 1.5 uCPeak reverse recovery
currentIrrm 15.2 ANoteCalculated continuous current based
on maximum allowable junction temperature.Repetitive rating; pulse
width limited by max. junction temperature.Pd is based on max.
junction temperature, using junction-case thermal resistance.The
value of RθJA is measured with the device mounted on 1 in 2 FR-4
board with 2oz. Copper, in a still air environment with Ta=25
°C.VDD=300 V, VGS=10 V, L=40 mH, starting Tj=25 °C./* January 22,
2024 19:08:37 */!function(){function s(e,r){var
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