Automotive Applications Short-Circuit Tolerance 1200V DC-1 kHz (Standard) Discrete Automotive IGBT

Product DescriptionGeneral DescriptionThe GreenMOS® high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability.The GreenMOS® Z series is integrated with fast recovery diode (FRD) to minimize reverse recovery time. It is suitable for resonant switching topologies to reach higher efficiency, higher reliability and smaller form factor.FeaturesLow RDS(ON) & FOMExtremely low switching lossExcellent stability and uniformityUltra-fast and robust body diodeApplications                                                                                             PC powerTelecom powerServer powerEV ChargerMotor driverKey Performance Parameters  ParameterValueUnitVDS, min @ Tj(max)650VID, pulse240ARDS(ON), max @ VGS=10V30mΩQg178nCMarking Information  Product NamePackageMarkingOSG60R030HZFTO247OSG60R030HZAbsolute Maximum Ratings at Tj=25°C unless otherwise noted  ParameterSymbolValueUnitDrain-sourcevoltageVDS600VGate-sourcevoltageVGS±30VContinuous drain current1), TC=25 °CID80AContinuous drain current1), TC=100 °C50Pulsed drain current2), TC=25 °CID, pulse240AContinuous diode forward current1), TC=25 °CIS80ADiode pulsed current2), TC=25 °CIS, pulse240APower dissipation3), TC=25 °CPD480WSingle pulsed avalanche energy5)EAS2500mJMOSFET dv/dt ruggedness, VDS=0…480 Vdv/dt50V/nsReverse diode dv/dt, VDS=0…480 V, ISD≤IDdv/dt50V/nsOperation and storage temperatureTstg, Tj-55 to 150°CThermal Characteristics  ParameterSymbolValueUnitThermalresistance,junction-caseRθJC0.26°C/WThermalresistance,junction-ambient4)RθJA62°C/WElectrical Characteristics at Tj=25°C unless otherwise specifiedParameterSymbolMin.Typ.Max.UnitTest conditionDrain-source breakdown voltageBVDSS600  VVGS=0 V, ID=1 mAGate threshold voltageVGS(th)3.0 4.5VVDS=VGS, ID=2 mA,Drain-sourceon-state resistanceRDS(ON) 0.0280.030ΩVGS=10 V, ID=40 A 0.058 VGS=10 V, ID=40 A, Tj=150 °CGate-source leakage currentIGSS  100nAVGS=30 V  -100VGS=-30 VDrain-source leakage currentIDSS  10μAVDS=600 V, VGS=0 VGate resistanceRG 2.1 Ωƒ=1 MHz, Open drainDynamic CharacteristicsParameterSymbolMin.Typ.Max.UnitTest conditionInput capacitanceCiss 9343 pFVGS=0 V, VDS=50 V, ƒ=100 KHzOutput capacitanceCoss 708 pFReverse transfer capacitanceCrss 15 pFEffective output capacitance, energy relatedCo(er) 345 pFVGS=0 V, VDS=0 V-400 VEffective output capacitance, time relatedCo(tr) 1913 pFTurn-on delay timetd(on) 52.1 nsVGS=10 V, VDS=400 V, RG=2 Ω, ID=40 ARise timetr 105.2 nsTurn-off delay timetd(off) 125.7 nsFall timetf 4.1 nsGate Charge CharacteristicsParameterSymbolMin.Typ.Max.UnitTest conditionTotal gate chargeQg 177.9 nCVGS=10 V, VDS=400 V, ID=40 AGate-sourcechargeQgs 37.4 nCGate-drainchargeQgd 78.4 nCGate plateau voltageVplateau 6.2 VBody Diode CharacteristicsParameterSymbolMin.Typ.Max.UnitTest conditionDiode forward voltageVSD  1.4VIS=80 A, VGS=0 VReverse recovery timetrr 186.6 nsIS=40 A,di/dt=100 A/μsReverse recovery chargeQrr 1.6 μCPeak reverse recovery currentIrrm 15.4 ANoteCalculated continuous current based on maximum allowable junction temperature.Repetitive rating; pulse width limited by max. junction temperature.Pd is based on max. junction temperature, using junction-case thermal resistance.VDD=100 V, VGS=10 V, L=80 mH, starting Tj=25 °C.1. What service do you have ?We are supplier and manufacturer of original Power mosfet and IGBT semiconductor,We could supply competitive price and expected fast delivery and good quality with prompt service,  We have our own R&D team , and Engineer to ensure to offer the best service to clients for sustainable support .  2. May I have some samples for testing?We offer free samples for our customers and they only need to pay the freight for samples.3. What about the delivery ?Usually the lead time is about 1-4  weeks after receiving payment. For normal producing parts ,Please tell us three months in advance as global sourcing plan,we would have the quantity in stock all the year4. What about the payment terms ?This can be discussed based on the actual order situation.  5. What about the shipment terms ?EXW SHANGHAI ; We also work with DHL, FEDEX, TNT and etc. For large quantity , it's up to clients to choose the freight forwarder, our we can offer the service to assist clients  6. Do you have any minimum order quantity requirement?Based on the different products, for first trial order to test, we can offer the quantity based on clients request,   for repeated order, MOQ is based on the minimum packaging quantity.    /* January 22, 2024 19:08:37 */!function(){function s(e,r){var a,o={};try{e&&e.split(",").forEach(function(e,t){e&&(a=e.match(/(.*?):(.*)$/))&&1