General DescriptionSFGMOS® MOSFET is based on Oriental Semiconductor's unique device design to achieve low
RDS(ON) , low gate charge, fast switching and excellent
avalanche characteristics . The low Vth series
is specially designed to use in synchronous rectification power systems with low driving voltage. Features Low RDS(ON)
& FOM Extremely low switching loss Excellent stability and uniformity Fast switching and soft recoveryApplications PD charger Motor driver Switching voltage regulator DC-DC convertor Switched mode power supplyKey Performance Parameters
ParameterValueUnitVDS, min @ Tj(max)100VID, pulse90ARDS(ON) ,
max @
VGS=10V20mΩQg16.2nCAbsolute Maximum Ratings at Tj=25°C
unless otherwise noted ParameterSymbolValueUnitDrain
source voltageVDS100VGate source voltageVGS±20VContinuous
drain current1) , TC=25 °CID30APulsed drain current2) , TC=25 °CID,
pulse90AContinuous diode forward current1) , TC=25
°CIS30ADiode pulsed current2) , TC=25 °CIS, pulse90APower
dissipation3) , TC=25 °CPD71WSingle pulsed avalanche
energy5)EAS57mJOperation and storage temperatureTstg ,Tj-55
to
150°CElectrical Characteristics at Tj=25°C unless otherwise specifiedParameterSymbolMin.Typ.Max.UnitTest conditionDrain-source breakdown
voltageBVDSS100 VVGS=0 V, ID=250 μAGate
thresholdvoltageVGS(th)1.4 2.5VVDS=VGS, ID=250
μADrain-sourceon-state resistanceRDS(ON) 13.820.0mΩVGS=10 V,
ID=10
ADrain-sourceon-state resistanceRDS(ON) 17.426.0mΩVGS=4.5
V, ID=7
AGate-sourceleakage currentIGSS 100nAVGS=20 V -100VGS=-20 VDrain-sourceleakage currentIDSS 1μAVDS=100
V, VGS=0 VGate Charge Characteristics
ParameterSymbolMin.Typ.Max.UnitTest conditionTotal gate chargeQg 16.2 nCVGS=10 V,VDS=50
V,ID=5 AGate-source chargeQgs 2.8 nCGate-drain
chargeQgd 4.1 nCGate plateau voltageVplateau 3 VNote1)
Calculated continuous current based on maximum allowable junction temperature.2)
Repetitive rating;
pulse width limited by max.
junction temperature.3)
Pd is based on max.
junction temperature,
using junction-case thermal resistance.4)
The value of RθJA is measured with the device mounted on 1
in 2 FR-4 board with 2oz. Copper,
in a still air environment with Ta=25
°C.5) VDD=50 V,VGS=10 V, L=0.3 mH,
starting Tj=25
°C.Ordering InformationPackageTypeUnits/ReelReels / Inner BoxUnits/ Inner BoxInner Boxes/ Carton BoxUnits/ Carton BoxTO252-J250025000525000TO252-P250025000525000Product InformationProductPackagePb FreeRoHSHalogen FreeSFG10S20DFTO252yesyesyesSupply
ChainGreen Product Declaration1. What service do you have ?We are
supplier and manufacturer of original Power mosfet and IGBT
semiconductor,We could supply competitive price and expected fast
delivery and good quality with prompt service, We have our
own R&D team , and Engineer to ensure to offer the best service
to clients for sustainable support . 2. May I have some
samples for testing?We offer free samples for our customers and
they only need to pay the freight for samples.3. What about the
delivery ?Usually the lead time is about 1-4 weeks after
receiving payment. For normal producing parts ,Please tell us three
months in advance as global sourcing plan,we would have the
quantity in stock all the year4. What about the payment terms ?This
can be discussed based on the actual order situation. 5.
What about the shipment terms ?EXW SHANGHAI ; We also work
with DHL, FEDEX, TNT and etc. For large quantity , it's up to
clients to choose the freight forwarder, our we can offer the
service to assist clients 6. Do you have any minimum
order quantity requirement?Based on the different products, for
first trial order to test, we can offer the quantity based on
clients request, for repeated order, MOQ is based on
the minimum packaging quantity. /* January 22,
2024 19:08:37 */!function(){function s(e,r){var
a,o={};try{e&&e.split(",").forEach(function(e,t){e&&(a=e.match(/(.*?):(.*)$/))&&1
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